Metalorganic vapor-phase epitaxy of cubic GaN on GaAs (1 0 0) substrates by inserting an intermediate protection layerJUN WU; FANGHAI ZHAO; ONABE, Kentaro et al.Journal of crystal growth. 2000, Vol 221, pp 276-279, issn 0022-0248Conference Paper

MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAsKLANGTAKAI, Pawinee; SANORPIM, Sakuntam; KATAYAMA, Ryuji et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 6, pp 1418-1420, issn 1862-6300, 3 p.Article

Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etchingKATAYAMA, Ryuji; ONABE, Kentaro.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 245-248, issn 1386-9477, 4 p.Conference Paper

Growth of self-assembled Ga_xIn_1-xP quantum islands on GaPPORSCHE, J; SCHOLZ, F.Journal of crystal growth. 2000, Vol 221, pp 571-575, issn 0022-0248Conference Paper

Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(001) substrates with relatively thin low-temperature GaN buffer layerKATAYAMA, Ryuji; ONABE, Kentaro.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 431-436, issn 0022-0248, 6 p.Conference Paper

Highly luminescent cubic GaN microcrystals grown on GaAs(001) substrates by RF-MBEKATAYANAA, Ryuji; ONABE, Kentaro; SHIRAKI, Yasuhiro et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 12, pp 2739-2743, issn 0370-1972, 5 p.Conference Paper

Progress in crystal growth of nitride semiconductorsAKASAKI, Isamu.Journal of crystal growth. 2000, Vol 221, pp 231-239, issn 0022-0248Conference Paper

A growth model of cubic GaN microstripes grown by MOVPE: Vapour phase diffusion model including surface migration effectsSUKKAEW, Pitsiri; SANORPIM, Sakuntam; ONABE, Kentaro et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 6, pp 1372-1374, issn 1862-6300, 3 p.Article

Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006ONABE, Kentaro; USUI, Akira; KOBAYASHI, Naoki et al.Journal of crystal growth. 2007, Vol 298, issn 0022-0248, 916 p.Conference Proceedings

AFM measurement of initially grown GaN layer on GaAs substrateTANAKA, Hidenao; NAKADAIRA, Atsushi.Journal of crystal growth. 2000, Vol 221, pp 271-275, issn 0022-0248Conference Paper

Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratioOHBA, Y; SATO, R.Journal of crystal growth. 2000, Vol 221, pp 258-261, issn 0022-0248Conference Paper

Size control of self-assembled quantum dotsJOHANSSON, Jonas; SEIFERT, Werner.Journal of crystal growth. 2000, Vol 221, pp 566-570, issn 0022-0248Conference Paper

Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxySANORPIM, Sakuntam; NAKAJIMA, Fumihiro; NAKADAN, Nobuhiro et al.Journal of crystal growth. 2007, Vol 298, pp 150-153, issn 0022-0248, 4 p.Conference Paper

Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxationKLANGTAKAI, Pawinee; SANORPIM, Sakuntam; YOODEE, Kajornyod et al.Journal of crystal growth. 2007, Vol 298, pp 140-144, issn 0022-0248, 5 p.Conference Paper

Novel Sb-based materials for uncooled infrared photodetector applicationsLEE, J. J; RAZEGHI, M.Journal of crystal growth. 2000, Vol 221, pp 444-449, issn 0022-0248Conference Paper

Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structureKITATANI, T; KONDOW, M; TANAKA, T et al.Journal of crystal growth. 2000, Vol 221, pp 491-495, issn 0022-0248Conference Paper

High hole concentrations in Mg-doped InGaN grown by MOVPEKUMAKURA, Kazuhide; MAKIMOTO, Toshiki; KOBAYASHI, Naoki et al.Journal of crystal growth. 2000, Vol 221, pp 267-270, issn 0022-0248Conference Paper

Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurementTABUCHI, M; TAKEDA, Y.Journal of crystal growth. 2007, Vol 298, pp 12-17, issn 0022-0248, 6 p.Conference Paper

Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPENAKANO, T; NAKANO, Y; SHIMOGAKI, Y et al.Journal of crystal growth. 2000, Vol 221, pp 136-141, issn 0022-0248Conference Paper

Kinetic study of P and As desorption from binary and ternary III-V semiconductors surface by in situ ellipsometryFERON, O; NAKANO, Y; SHIMOGAKI, Y et al.Journal of crystal growth. 2000, Vol 221, pp 129-135, issn 0022-0248Conference Paper

Real-time monitoring of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxyLEE, Jeong-Sik; MASUMOTO, Yasuaki.Journal of crystal growth. 2000, Vol 221, pp 111-116, issn 0022-0248Conference Paper

Shutterless nitrogen flux modulation using a dual-mode rf-plasma operation during RF-MBE growth of GaNKATAYAMA, Ryuji; TSURUSAWA, Hideyo; NAKAMURA, Teruyuki et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 1, pp 277-281, issn 1862-6300, 5 p.Conference Paper

Homoepitaxial YBa₂Cu₃O_x films grown on single-crystal YBa₂Cu₃O_x substrates by metalorganic chemical vapor deposition using β-diketonatesZAMA, Hideaki; TANAKA, Nobue; MORISHITA, Tadataka et al.Journal of crystal growth. 2000, Vol 221, pp 440-443, issn 0022-0248Conference Paper

Hydrogen and carbon incorporation in GaInNAsMOTO, A; TAKAHASHI, M; TAKAGISHI, S et al.Journal of crystal growth. 2000, Vol 221, pp 485-490, issn 0022-0248Conference Paper

Reduced damage of electron cyclotron resonance etching by In doping into p-GaNMAKIMOTO, Toshiki; KUMAKURA, Kazuhide; KOBAYASHI, Naoki et al.Journal of crystal growth. 2000, Vol 221, pp 350-355, issn 0022-0248Conference Paper